Tunneling Magnetoresistance, Spin-Transfer and Spinorbitronics with (Ga,Mn)As

Authored by: J. M. George , D.Q. To , T. Huong Dang , E. Erina , T. L. Hoai Nguyen , H. J. Drouhin , H. Jaffrès

Spintronics Handbook: Spin Transport and Magnetism, Second Edition

Print publication date:  June  2019
Online publication date:  May  2019

Print ISBN: 9781498769600
eBook ISBN: 9780429434235
Adobe ISBN:

10.1201/9780429434235-4

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Abstract

This chapter reviews some fundamental properties of tunneling spin-current, spin-transport of holes and spin-transfer of angular momenta in the valence band of magnetic III–V tunneling heterojunctions involving the ferromagnetic semiconductor (Ga,Mn)As. This material is further discussed in Chapter 9, Volume 2 and has recently been the focus of some extended reports where readers could find additional details of the electronic structure [1, 2]. Discussion complementing this chapter can be found throughout this book, for example, on electric-field control of magnetism in Chapter 13, Volume 2, spin torque and spin-orbit torque in Chapters 7–9, Volume 2, Hall effects in Chapter 8, Volume 2, topological insulators in Chapters 14 and 15, Volume 2, and magnetic quantum dots in Chapter 6, Volume 3.

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