Solar-Blind AlGaN Devices

Authored by: Jiangnan Dai , Jingwen Chen , Jun Zhang , Wei Zhang , Shuai Wang , Feng Wu , Changqing Chen

Handbook of Solid-State Lighting and LEDs

Print publication date:  June  2017
Online publication date:  June  2017

Print ISBN: 9781498741415
eBook ISBN: 9781315151595
Adobe ISBN:

10.1201/9781315151595-15

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Abstract

There has been a growing interest in the development of solar-blind ultraviolet photodetectors for a variety of applications, including detection of missiles, precision guidance, biochemical analysis, lithography aligners, secure space-to-space communications, and ozone monitor. AlxGa1−xN has emerged as the most promising material system for such devices. AlxGa1−xN-based solar-blind photodetectors with different structures had been successfully fabricated, and their working principle has been demonstrated. However, the material quality and the device process of AlGaN devices still need to be further improved to enhance performance, including the development of ohmic metal contacts to both n-type and p-type AlxGa1−xN films with high Al component.

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