ABSTRACT
The III-nitride semiconductors have become one of the most important semiconductors in the world due to the rapid growth of solid state lighting, laser, and power electronic applications [1–14]. The III-nitrides including alloys of AlN, InN, and GaN are direct bandgap materials, which span the entire visible emission spectrum including Deep UV to infrared wavelength. Besides the excellent electronic properties, the GaN and AlN have a relatively wider bandgap and very good thermal properties and a reasonable electron effective mass, which make them very suitable for power electronic applications [15–25]. In this chapter, we will introduce the basic electronic properties of nitride-based materials.
