ABSTRACT
III-Nitride (III-N) materials combine Column-III elements with nitrogen to provide a new device platform for microelectronic and optoelectronic applications to overcome several fundamental physics limitations for devices using conventional low-bandgap semiconductors. Commonly used III-N semiconductors include gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and their ternary and quaternary alloys such as InGaN, InAlN, AlGaN, and AlInGaN. As shown in Figure 24.1, III-N semiconductors cover wide ranges of bandgap energy from 0.7 eV (for InN) to 6.2 eV (for AlN). Advanced growth of III-N materials can be achieved using novel epitaxial technologies such as molecular beam epitaxy (MBE), metal–organic chemical vapor deposition (MOCVD), or hydride vapor phase epitaxy (HVPE). Versatile wide-bandgap quantum mechanical structures are commonly seen in III-N devices through the bandgap engineering. The bandgap energy versus lattice constant of the III-N material systems. The inset indicates the polarization alignments for AlGaN/GaN and InGaN/GaN heterojunctions grown on a Ga-faced substrate. https://s3-euw1-ap-pe-df-pch-content-public-u.s3.eu-west-1.amazonaws.com/9781315216911/9fc10d54-04ca-4e8b-af21-9892cbc5b25d/content/fig24_1.tif"/>
