ABSTRACT
As the most widely used structure in integrated circuits design, the modeling, characterization, and simulation of the MOSFET have grown into a field all its own. The history of MOSFET modeling for extreme environments is interwoven in the development of SPICE itself. SPICE, as its name implies, was designed as a Simulation Program with Integrated Circuit Emphasis [1], with transistors being the primary active device employed on such ICs. SPICE, like its predecessor the CANCER program (Computer Analysis of Nonlinear Circuits Excluding Radiation), specifically limited itself to electrical integrated circuit simulation. Thus, the last 40 years have been spent by the rare few extending SPICE and its venerable MOSFET models to include effects due to environmental factors such as radiation and wide temperature specifically left off the table from the start.
