ABSTRACT

Field-effect transistor technologies have been critical building blocks for satellite systems since their introduction into the microelectronics industry. The extremely high cost of launching payloads into orbit necessitates systems to have small form factor, ultra-low power consumption, and reliable lifetime operation, while satisfying the performance requirements of a given application [1]. Silicon-based complementary metal–oxide–semiconductors (Si CMOS) have traditionally been able to adequately meet these demands when coupled with radiation hardening techniques, which have been developed over years of invested research. However, as customer demands increase, pushing the limits of system throughput, noise, and speed, alternative technologies must be employed. Silicon–germanium BiCMOS platforms have been identified as a technology candidate for meeting the performance criteria of these pioneering satellite systems and deep space applications, contingent on their ability to be hardened to radiation-induced damage [2]. Given that SiGe technology is a relative newcomer to terrestrial and extraterrestrial applications in radiation-rich environments, the same wealth of knowledge of time-tested radiation hardening methodologies has not been established as it has for Si CMOS. In this chapter, the current research into SiGe HBT radiation hardening techniques will be highlighted, bringing attention to the advancements that have been made and the challenges that still remain.