ABSTRACT
Many nanoarchitectures are based on the crossbar arrays where active devices are built at the junctions between access lines laid out in orthogonal arrangement [1]. NanoFabrics [2], nanoscale programmable logic array (NanoPLA) [3], and nanoscale application-specific integrated circuit (NASIC) [4] are some examples of the two-dimensional (2D) crossbar-based nanoarchitectures. Crossbar arrays can also be built on top of CMOS (complementary metal–oxide–semiconductor) to implement three-dimensional (3D) architectures such as CMOS/nanowire/molecular (CMOL) [5] or field-programmable nanowire interconnect (FPNI) [6]. These hybrid nanoarchitectures can utilize both the computation power of CMOS and the high-density data storage and signal-routing capabilities of crossbar arrays. Crossbar array architectures attract great attention in the development of molecular electronics [7–10]. Some molecule-based devices have different resistance states and can be electrically switching between them. The resistive network of these devices can be built as crossbar arrays to implement logic and memory functions. The simple structure of crossbar arrays may enable the bottom-up self-assembly process to achieve low fabrication cost [11].
