ABSTRACT
Nanowire field effect transistors (NFETs), FinFETs, and other 3D architectures are progressively replacing the bulk metal-oxide semiconductor field-effect transistor (MOSFET) architecture in a complementary metal-oxide semiconductor (CMOS) Si technology. This process has been started by Intel’s introduction of TriGate (a variant of FinFET) MOSFET architecture into high-volume production of the 22 nm technology node [1]. The superior electrical integrity of FinFETs and nanowires resulting in very low leakage current at the off-state, as compared to much leakier bulk architectures, is the main reason for this trend [2]. However, when the transistor cross section and channel lengths reach sub-10 nm dimensions, quantum effects such as confinement, gate tunneling, and source/drain (S/D) tunneling will dominate over classical electrostatic alternately affecting the electrostatic integrity of 3D device architectures. Therefore, we deploy nonequilibrium Green’s function (NEGF) [3] simulations to study the effect of a single dopant unintentionally present in the channel of an NFET [4]. The probability of occurrence of this unintentional dopant will also increase in devices with sub-10 nm dimensions.
