Thin-Film Transistors Fabricated on Intentionally Agglomerated, Laser-Crystallized Silicon on Insulator

Authored by: Themistokles Afentakis

Noval Advances in Microsystems Technologies and their Applications

Print publication date:  July  2013
Online publication date:  April  2016

Print ISBN: 9781466560666
eBook ISBN: 9781466560673
Adobe ISBN:

10.1201/b15283-9

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Abstract

Laser-induced melting and recrystallization of silicon films, typically referred to as laser crystallization, have been established as the preferred method to obtain high-mobility silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) on glass substrates. The fabrication of such semiconductor devices on glass and other low-temperature-compatible substrates is of primary importance for the flat-panel display industry. Active-matrix (AM) displays, employing one or more thin-film transistors (TFTs) per pixel, are the standard circuit architecture in high-resolution displays, for all mainstream display technologies used to emit or modulate light (such as liquid crystal and light-emitting diode).

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