Abstract

Laser-induced melting and recrystallization of silicon films, typically referred to as laser crystallization, have been established as the preferred method to obtain high-mobility silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) on glass substrates. The fabrication of such semiconductor devices on glass and other low-temperature-compatible substrates is of primary importance for the flat-panel display industry. Active-matrix (AM) displays, employing one or more thin-film transistors (TFTs) per pixel, are the standard circuit architecture in high-resolution displays, for all mainstream display technologies used to emit or modulate light (such as liquid crystal and light-emitting diode).