Abstract

Aside from the new physics that arise from understanding pristine graphene, its much anticipated wide application in electronic devices has attracted more intense research. The excellent structural flexibility and ballistic charge carrier transport properties make graphene a candidate for postsilicon electronics. Field-effect transistors made of large-area graphene channels, however, suffers from the nonattainment of the “switch-off” state. Band-gap introduction is seen to be the most important solution. Considered as viable routes to stable band gap formation, the hydrogenation and Si substrate effects have been experimentally and theoretically investigated. In this chapter, the successful band gap opening in graphene due to chemical modification by silicon (Si) and hydrogen (H) is reviewed. The fundamentals of electronic modification arising from such interaction are discussed.