Chemical Vapor Deposition of Graphene for Electronic Device Application

Authored by: Golap Kalita , Masayoshi Umeno , Masaki Tanemura

Graphene Science Handbook

Print publication date:  April  2016
Online publication date:  April  2016

Print ISBN: 9781466591318
eBook ISBN: 9781466591325
Adobe ISBN:

10.1201/b19642-41

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Abstract

The discovery of a single atomic layer of carbon called graphene brought tremendous attention as a next-generation electronic mat­erial. Graphene has been derived or synthesized through various approaches, such as exfoliation of graphitic materials, epitaxial growth on silicon carbide (SiC), and the chemical vapor deposition (CVD) technique. Among these processes, the CVD approach has several advantages for the controlled synthesis of high-quality and large-area graphene in electronic device applications. The growth and nucleation process of single-crystal graphene domain and the formation of continuous large-area graphene film in a CVD process are discussed in this chapter. CVD graphene shows an excellent potential as the flexible transparent conducting optical window for various electronic devices. The fabrication process and application of transparent conductor using CVD graphene are discussed in detail.

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