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Fundamentals of silicon nanotubes
- Introduction
- Electronic properties of silicon nanotubes
- Electronic properties of hydrogenated Si nanotubes
- Electronic properties of nanotube under intrinsic curvature effect
- Tight-binding description of electronic properties of silicon nanotube up to second-nearest neighbor
- The electronic properties of Si h-NTs under axial magnetic field
- Theoretical study on optical properties of silicon nanotubes
- Optical properties of Si h-NTs under intrinsic curvature effect for light parallel polarization
- Optical properties of silicon nanotubes: A second-nearest neighbor tight-binding approach
- Optical absorption of nanotubes under axial magnetic field
- Fabrication methods of silicon nanotubes and experimental evidences
- Application of silicon nanotubes for lithium-ion batteries
- Summary
- References
Abstract
After the discovery of carbon nanotubes (CNTs) by Iijima (1991) scientists predicted other kinds of nanotubes, such as Gallium nitride (GaN), Boron nitride (BN), Aluminium nitride (AlN) (Goldberger et al. 2003; Xi et al. 2006; Zhukovskii et al. 2006), and silicon nanotubes (SiNTs) (Fagan et al. 2000) while silicon nanowires with SP3 hybridization had been reported as a one-dimensional silicon nanostructure for many years (Namastsu et al. 1995; Ono et al. 1997; Leobandung et al. 1997; Tang et al. 2000; Wu et al. 2001; Zhang et al. 2001; Schi et al. 2001).
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