Nanocrystalline silicon thin films

Authored by: Atif Mossad Ali , Takao Inokuma

Silicon Nanomaterials Sourcebook

Print publication date:  August  2017
Online publication date:  July  2017

Print ISBN: 9781498763776
eBook ISBN: 9781315153544
Adobe ISBN:


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Silicon is at the heart of the microelectronics. Its dominance over other semiconductors is intimately tied to its superior materials and process, and to the tremendous base of technology that has developed around it. A recent trend toward development of nanocrystalline silicon (nc-Si) lies in preparing nc-Si thin films exhibiting strong photoluminescence, based on a quantum size effect (Ali et al. 2002). This technique is expected to have a potential for application to optoelectronics. In addition, as crystallites are decreased in size to the nanoscale level, their electronic and vibrational properties will be modified, then the surface and quantum size effects play an important role. Formation of nc-Si structures has been tried utilizing various techniques: anodic oxidation of crystalline Si, that is, formation of porous Si formation of nc-Si thin films using plasma-enhanced chemical vapor deposition (PECVD), sputtering, evaporation, and ion beam synthesis. Furthermore, nc-Si thin films can be obtained by the thermal crystallization of amorphous Si films or Si-rich oxide films.

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