ABSTRACT

Systems with silicon nanocrystals revealing peculiarities in atomic and electronic structure are studied by means of techniques sensitive to physical and chemical states, local atomic surroundings, and electronic structures. These techniques include scanning and high-resolution transmission electron microscopy, X-ray diffraction, ultrasoft X-ray emission spectroscopy (USXES), X-ray photoelectron spectroscopy (XPS), and X-ray absorption near-edge structure spectroscopy (XANES). The last two techniques were applied with the use of highly brilliant synchrotron radiation.